inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor irf 342 description v gs rated at 20v silicon gate for fast switching speeds i dss ,v ds(on) ,soa and v gs(th) specified at elevated temperature rugged applications designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 8.3 a p tot total dissipation@tc=25 125 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF342 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 0.25ma 400 v v gs(th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 5.2a 0.8 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds = 400v; v gs = 0 250 ua v sd diode forward voltage i f = 10a; v gs = 0 2 v ciss input capacitance v ds =25v,v gs =0v, f=1.0mhz 1250 1600 pf coss output capacitance 300 450 pf crss reverse transfer capacitance 80 150 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =200v,i d =10a r g =9.1 17 21 ns tr rise time 27 41 ns td(off) turn-off delay time 45 75 ns tf fall time 20 36 ns pdf pdffactory pro www.fineprint.cn
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